Calculation of electron transport in branched semiconductor nanostructures using quantum network model

Electron transport in branched semiconductor nanostructures provides many possibilities for creating fundamentally new devices. We solve the problem of its calculation using a quantum network model. The proposed scheme consists three computational parts: S-matrix junction, terms junctions’ S-matrices, electric currents through based on S-matrix. To calculate we propose scattering boundary conditions clear integro-differential form. As an alternative, also consider Dirichlet-to-Neumann and Neumann-to-Dirichlet map methods. obtain combining formula. find electrical framework Landauer–Büttiker formalism. Everywhere calculations, use extended matrices, which allows taking into account correctly contribution tunnel effects between junctions. demonstrate by modeling nanostructure two-dimensional electron gas. For this purpose offer model formed smooth junctions with one, two adjacent branches. properties such (by example GaAs), four junctions, depending temperature.